IRL7486MTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Series :

HEXFET®, StrongIRFET™

Turn-Off Delay Time :

54 ns

Vgs (Max) :

±20V

Mount :

Surface Mount

Height :

700μm

Terminal Position :

BOTTOM

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

104W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Width :

5.05mm

Factory Lead Time :

12 Weeks

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

836A

Vgs(th) (Max) @ Id :

2.5V @ 150μA

Number of Terminations :

6

JESD-30 Code :

R-XBCC-N6

Package / Case :

DirectFET™ Isometric ME

Drain to Source Voltage (Vdss) :

40V

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Continuous Drain Current (ID) :

209A

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

190 mJ

Published :

2013

Current - Continuous Drain (Id) @ 25°C :

209A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

111nC @ 4.5V

Threshold Voltage :

1.8V

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

35 ns

REACH SVHC :

Unknown

Rds On (Max) @ Id, Vgs :

1.25m Ω @ 123A, 10V

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

6904pF @ 25V

Terminal Form :

NO LEAD

Number of Elements :

1

Number of Pins :

2

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

40V

Length :

6.35mm