IRL7833STRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

12 Weeks

Power Dissipation :

140W

Gate Charge (Qg) (Max) @ Vgs :

47nC @ 4.5V

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

3.8m Ω @ 38A, 10V

JESD-609 Code :

e3

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

75A

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

150A

Current - Continuous Drain (Id) @ 25°C :

150A Tc

Radiation Hardening :

No

Turn On Delay Time :

18 ns

Published :

2004

Width :

9.65mm

Number of Elements :

1

Series :

HEXFET®

Mount :

Surface Mount

Pulsed Drain Current-Max (IDM) :

600A

Input Capacitance (Ciss) (Max) @ Vds :

4170pF @ 15V

Vgs (Max) :

±20V

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Element Configuration :

Single

Transistor Element Material :

SILICON

Resistance :

3.8mOhm

Number of Pins :

3

Length :

10.668mm

JESD-30 Code :

R-PSSO-G2

Number of Terminations :

2

Power Dissipation-Max :

140W Tc

Vgs(th) (Max) @ Id :

2.3V @ 250μA

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Height :

4.826mm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Turn-Off Delay Time :

21 ns

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

30

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Rise Time :

50ns

Fall Time (Typ) :

6.9 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

30V

Operating Temperature :

-55°C~175°C TJ

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260