IRL7833PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rise Time :

50ns

Pulsed Drain Current-Max (IDM) :

600A

Drain Current-Max (Abs) (ID) :

75A

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

30V

Input Capacitance (Ciss) (Max) @ Vds :

4170pF @ 15V

Turn-Off Delay Time :

21 ns

Height :

8.763mm

Current - Continuous Drain (Id) @ 25°C :

150A Tc

Mount :

Through Hole

Vgs(th) (Max) @ Id :

2.3V @ 250μA

Width :

4.69mm

Number of Terminations :

3

Published :

2004

Number of Elements :

1

Threshold Voltage :

2.3V

Contact Plating :

Tin

Factory Lead Time :

12 Weeks

Resistance :

3.8mOhm

JEDEC-95 Code :

TO-220AB

Lead Free :

Lead Free

Package / Case :

TO-220-3

Power Dissipation-Max :

140W Tc

Transistor Element Material :

SILICON

Nominal Vgs :

2.3 V

Series :

HEXFET®

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

47nC @ 4.5V

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

150A

Number of Pins :

3

Transistor Application :

SWITCHING

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Element Configuration :

Single

Case Connection :

DRAIN

Power Dissipation :

140W

Voltage - Rated DC :

30V

Avalanche Energy Rating (Eas) :

560 mJ

Mounting Type :

Through Hole

Turn On Delay Time :

18 ns

Length :

10.5156mm

Current Rating :

150A

Radiation Hardening :

No

Packaging :

Tube

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

3.8m Ω @ 38A, 10V

Fall Time (Typ) :

6.9 ns

Recovery Time :

63 ns