IRL7833SPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Series :

HEXFET®

Max Junction Temperature (Tj) :

175°C

RoHS Status :

ROHS3 Compliant

Published :

2004

Radiation Hardening :

No

Lead Free :

Lead Free

Fall Time (Typ) :

6.9 ns

Height :

5.084mm

FET Type :

N-Channel

Mount :

Surface Mount

Nominal Vgs :

2.3 V

Mounting Type :

Surface Mount

Number of Pins :

3

Turn-Off Delay Time :

21 ns

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

3.8m Ω @ 38A, 10V

Threshold Voltage :

1.4V

Continuous Drain Current (ID) :

150A

Vgs(th) (Max) @ Id :

2.3V @ 250μA

Voltage - Rated DC :

30V

Packaging :

Tube

Drain to Source Breakdown Voltage :

30V

Rise Time :

50ns

Length :

10.668mm

Element Configuration :

Single

Width :

9.65mm

Power Dissipation :

140W

Turn On Delay Time :

18 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

4170pF @ 15V

Power Dissipation-Max :

140W Tc

Current - Continuous Drain (Id) @ 25°C :

150A Tc

Number of Channels :

1

Current Rating :

150A

Resistance :

3.8mOhm

Vgs (Max) :

±20V

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Recovery Time :

63 ns

Gate Charge (Qg) (Max) @ Vgs :

47nC @ 4.5V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB