IRL7833S

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

Non-RoHS Compliant

Drain Current-Max (Abs) (ID) :

75A

Terminal Form :

Gull wing

Number of Terminations :

2

Drain to Source Voltage (Vdss) :

30V

Series :

HEXFET®

JESD-30 Code :

R-PSSO-G2

Current - Continuous Drain (Id) @ 25°C :

150A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

Tin/Lead (Sn/Pb)

Rds On (Max) @ Id, Vgs :

3.8m Ω @ 38A, 10V

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs(th) (Max) @ Id :

2.3V @ 250μA

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

560 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

30V

Mounting Type :

Surface Mount

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

30

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

47nC @ 4.5V

Number of Elements :

1

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

4170pF @ 15V

ECCN Code :

EAR99

Power Dissipation-Max :

140W Tc

Drain-source On Resistance-Max :

0.0038Ohm

Transistor Element Material :

SILICON

Surface Mount :

yes

Operating Temperature :

-55°C~175°C TJ

JESD-609 Code :

e0

Pulsed Drain Current-Max (IDM) :

600A

Packaging :

Tube

Published :

2004

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

225