IRL5602STRRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Power Dissipation :

75W

Drain to Source Voltage (Vdss) :

20V

Rds On Max :

42 mΩ

Continuous Drain Current (ID) :

-24A

Mounting Type :

Surface Mount

Input Capacitance :

1.46nF

Series :

HEXFET®

Element Configuration :

Single

Drain to Source Breakdown Voltage :

-20V

Vgs(th) (Max) @ Id :

1V @ 250μA

Operating Temperature :

-55°C~175°C TJ

FET Type :

P-Channel

Gate to Source Voltage (Vgs) :

8V

Min Operating Temperature :

-55°C

Input Capacitance (Ciss) (Max) @ Vds :

1460pF @ 15V

Fall Time (Typ) :

84 ns

Number of Elements :

1

Power Dissipation-Max :

75W Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Rds On (Max) @ Id, Vgs :

42mOhm @ 12A, 4.5V

Turn-Off Delay Time :

53 ns

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Published :

2005

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Max Operating Temperature :

175°C

RoHS Status :

RoHS Compliant

Drain to Source Resistance :

42mOhm

Rise Time :

73ns

Supplier Device Package :

D2PAK

Vgs (Max) :

±8V

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 4.5V

Current - Continuous Drain (Id) @ 25°C :

24A Tc