IRL520

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 5V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

490pF @ 25V

DS Breakdown Voltage-Min :

100V

Vgs(th) (Max) @ Id :

2V @ 250μA

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

JESD-30 Code :

R-PSFM-T3

Current - Continuous Drain (Id) @ 25°C :

9.2A Tc

Number of Terminations :

3

Pulsed Drain Current-Max (IDM) :

31A

Continuous Drain Current (ID) :

9.2A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Vgs (Max) :

±10V

Configuration :

Single

Packaging :

Tube

Mounting Type :

Through Hole

ECCN Code :

EAR99

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Additional Feature :

LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY

Power Dissipation-Max :

60W Tc

Drain to Source Voltage (Vdss) :

100V

Mount :

Through Hole

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

JEDEC-95 Code :

TO-220AB

Qualification Status :

Not Qualified

RoHS Status :

Non-RoHS Compliant

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

270m Ω @ 5.5A, 5V

Drain-source On Resistance-Max :

0.27Ohm

Drive Voltage (Max Rds On,Min Rds On) :

4V 5V