IRL510L

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

2V @ 250μA

Case Connection :

DRAIN

Published :

2016

Number of Elements :

1

FET Type :

N-Channel

Length :

10.41mm

Drain-source On Resistance-Max :

0.54Ohm

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Continuous Drain Current (ID) :

5.6A

Width :

4.7mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Fall Time (Typ) :

18 ns

JESD-30 Code :

R-PSFM-T3

Gate Charge (Qg) (Max) @ Vgs :

6.1nC @ 5V

Mounting Type :

Through Hole

Turn On Delay Time :

9.3 ns

RoHS Status :

Non-RoHS Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4V 5V

Max Power Dissipation :

3.7W

Transistor Element Material :

SILICON

Number of Channels :

1

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Height :

9.01mm

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-220AB

Current - Continuous Drain (Id) @ 25°C :

5.6A Tc

Rise Time :

47ns

ECCN Code :

EAR99

Turn-Off Delay Time :

16 ns

Rds On (Max) @ Id, Vgs :

540m Ω @ 3.4A, 5V

Weight :

6.000006g

Drain to Source Breakdown Voltage :

100V

Packaging :

Tube

Vgs (Max) :

±10V

Additional Feature :

LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY

Operating Temperature :

-55°C~175°C TJ

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Gate to Source Voltage (Vgs) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 25V