IRL520NS

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Packaging :

Tube

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Published :

1998

Power Dissipation-Max :

3.8W Ta 48W Tc

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

100V

RoHS Status :

Non-RoHS Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Operating Temperature :

-55°C~175°C TJ

Avalanche Energy Rating (Eas) :

85 mJ

JESD-30 Code :

R-PSSO-G2

Drain-source On Resistance-Max :

0.22Ohm

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 5V

Drain to Source Voltage (Vdss) :

100V

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

HEXFET®

Surface Mount :

yes

Additional Feature :

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 25V

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

180m Ω @ 6A, 10V

Vgs (Max) :

±16V

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

2V @ 250μA

Drain Current-Max (Abs) (ID) :

10A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

35A

Transistor Application :

SWITCHING