IRL520NPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Termination :

Through Hole

Power Dissipation-Max :

48W Tc

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 5V

Number of Elements :

1

Rise Time :

35ns

Rds On (Max) @ Id, Vgs :

180m Ω @ 6A, 10V

Length :

10.5156mm

FET Type :

N-Channel

Lead Free :

Lead Free

Recovery Time :

160 ns

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 25V

Voltage - Rated DC :

100V

Terminal Finish :

MATTE TIN OVER NICKEL

Vgs(th) (Max) @ Id :

2V @ 250μA

Transistor Element Material :

SILICON

Vgs (Max) :

±16V

JEDEC-95 Code :

TO-220AB

Drain to Source Breakdown Voltage :

100V

Factory Lead Time :

12 Weeks

Qualification Status :

Not Qualified

Mount :

Through Hole

Packaging :

Tube

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

30

Turn-Off Delay Time :

23 ns

Avalanche Energy Rating (Eas) :

85 mJ

Threshold Voltage :

2V

Height :

8.77mm

Gate to Source Voltage (Vgs) :

16V

Width :

4.69mm

Series :

HEXFET®

Number of Terminations :

3

Case Connection :

DRAIN

Number of Pins :

3

Published :

1998

Fall Time (Typ) :

22 ns

Mounting Type :

Through Hole

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

10A Tc

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

250

Dual Supply Voltage :

100V

Resistance :

220mOhm

ECCN Code :

EAR99

Package / Case :

TO-220-3

Power Dissipation :

48W

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

RoHS Status :

ROHS3 Compliant

Nominal Vgs :

2 V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

10A

Turn On Delay Time :

4 ns

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE

Current Rating :

10A

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE