IRL510A

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Mfr.Part #
IRL510A
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 100V 5.6A TO220-3
Stock
32,473
In Stock :
32,473

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
5.6A Tc
Mounting Type :
Through Hole
Published :
1999
Input Capacitance (Ciss) (Max) @ Vds :
235pF @ 25V
Rds On (Max) @ Id, Vgs :
440mOhm @ 2.8A, 5V
Vgs (Max) :
±20V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drive Voltage (Max Rds On,Min Rds On) :
5V
Drain to Source Voltage (Vdss) :
100V
Power Dissipation-Max :
37W Tc
Gate Charge (Qg) (Max) @ Vgs :
8nC @ 5V
Packaging :
Tube
Package / Case :
TO-220-3
Supplier Device Package :
TO-220-3
Operating Temperature :
-55°C~175°C TJ
FET Type :
N-Channel
Vgs(th) (Max) @ Id :
2V @ 250μA
Datasheets
IRL510A
Introducing Transistors - FETs, MOSFETs - Single onsemi IRL510A from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-220-3, Operating Temperature:-55°C~175°C TJ, IRL510A pinout, IRL510A datasheet PDF, IRL510A amp .Beyond Transistors - FETs, MOSFETs - Single onsemi IRL510A ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi IRL510A


N-Channel Tube 440mOhm @ 2.8A, 5V ±20V 235pF @ 25V 8nC @ 5V 100V TO-220-3

IRL510A Description


IRL510A is a 100v advanced power MOSFET. A power MOSFET is a type of metal-oxide-silicon field-effect transistor designed to operate at low voltages while offering high switching speed and optimal efficiency. This innovative technology is central to a wide range of applications—including consumer electronics, power supplies, DC-to-DC converters, motor controllers, radio-frequency (RF) applications, transportation technology, and automotive electronics. The Operating and Storage Temperature Range is between -55 and 175℃. And the Transistor IRL510A is in the TO-220-3 package with 37W power dissipation.



IRL510A Features


  • Logic-Level Gate Drive

  • Avalanche Rugged Technology

  • Rugged Gate Oxide Technology

  • Lower Input Capacitance

  • Improved Gate Charge

  • Extended Safe Operating Area

  • Lower Leakage Current: 10μA (Max.) @ VDS = 100V

  • Lower RDS(ON): 0.336? (Typ.)



IRL510A Applications


  • Consumer electronics

  • Power supplies

  • DC-to-DC converters

  • Motor controllers

  • Radio-frequency (RF) applications

  • Transportation technology

  • Automotive electronics


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