IRL510S
- Mfr.Part #
- IRL510S
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 5.6A D2PAK
- Stock
- 447
- In Stock :
- 447
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Current - Continuous Drain (Id) @ 25°C :
- 5.6A Tc
- Drain to Source Breakdown Voltage :
- 100V
- Packaging :
- Tube
- Gate to Source Voltage (Vgs) :
- 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 5V
- Rise Time :
- 47ns
- Drain to Source Resistance :
- 540mOhm
- Power Dissipation-Max :
- 3.7W Ta 43W Tc
- RoHS Status :
- Non-RoHS Compliant
- Max Operating Temperature :
- 175°C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2016
- Weight :
- 1.437803g
- Supplier Device Package :
- D2PAK
- Length :
- 10.67mm
- Mounting Type :
- Surface Mount
- Drain to Source Voltage (Vdss) :
- 100V
- Rds On (Max) @ Id, Vgs :
- 540mOhm @ 3.4A, 5V
- Gate Charge (Qg) (Max) @ Vgs :
- 6.1nC @ 5V
- Turn-Off Delay Time :
- 16 ns
- Width :
- 9.02mm
- FET Type :
- N-Channel
- Mount :
- Surface Mount
- Continuous Drain Current (ID) :
- 5.6A
- Number of Channels :
- 1
- Fall Time (Typ) :
- 18 ns
- Rds On Max :
- 540 mΩ
- Input Capacitance (Ciss) (Max) @ Vds :
- 250pF @ 25V
- Min Operating Temperature :
- -55°C
- Input Capacitance :
- 250pF
- Height :
- 4.83mm
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Turn On Delay Time :
- 9.3 ns
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~175°C TJ
- Vgs (Max) :
- ±10V
- Datasheets
- IRL510S
N-Channel Tube 540mOhm @ 3.4A, 5V ±10V 250pF @ 25V 6.1nC @ 5V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRL510S Overview
A device's maximal input capacitance is 250pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 5.6A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 100V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 16 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 540mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 9.3 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 10V volts.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4V 5V).
IRL510S Features
a continuous drain current (ID) of 5.6A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 16 ns
single MOSFETs transistor is 540mOhm
a 100V drain to source voltage (Vdss)
IRL510S Applications
There are a lot of Vishay Siliconix
IRL510S applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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