IRL5602S
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- Mfr.Part #
- IRL5602S
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 24A D2PAK
- Stock
- 33,484
- In Stock ：
- 33,484
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- P-Channel
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Gate Charge (Qg) (Max) @ Vgs :
- 44nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1460pF @ 15V
- Drain to Source Voltage (Vdss) :
- 20V
- Current - Continuous Drain (Id) @ 25°C :
- 24A Tc
- Published :
- 1999
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Series :
- HEXFET®
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 75W Tc
- Vgs (Max) :
- ±8V
- Packaging :
- Tube
- Rds On (Max) @ Id, Vgs :
- 42m Ω @ 12A, 4.5V
- RoHS Status :
- Non-RoHS Compliant
- Operating Temperature :
- -55°C~175°C TJ
- Mounting Type :
- Surface Mount
- Datasheets
- IRL5602S
P-Channel Tube 42m Ω @ 12A, 4.5V ±8V 1460pF @ 15V 44nC @ 4.5V 20V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRL5602S Description
IRL5602S is a -20v HEXFET?Power MOSFET. The Infineon IRL5602S utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide varietyof application.
IRL5602S Features
-
Advanced Process Technology
-
Dynamic dv/dt Rating
-
175°C Operating Temperature
-
P-Channel
-
Fast Switching
-
Fully Avalanche Rate
IRL5602S Applications
-
DC motor drive
-
High efficiency synchronous rectification in SMPS
-
Uninterruptible power supply
-
High speed power switching
-
Hard switched and high frequency circuits
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