IRL540NSTRRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

36A Tc

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

44m Ω @ 18A, 10V

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate to Source Voltage (Vgs) :

16V

Vgs(th) (Max) @ Id :

2V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 25V

Height :

4.826mm

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

JESD-30 Code :

R-PSSO-G2

Turn On Delay Time :

11 ns

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Continuous Drain Current (ID) :

36A

Voltage - Rated DC :

100V

Max Operating Temperature :

175°C

ECCN Code :

EAR99

Series :

HEXFET®

FET Type :

N-Channel

Number of Pins :

3

Mount :

Surface Mount

Power Dissipation :

3.8W

Mounting Type :

Surface Mount

Vgs (Max) :

±16V

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Width :

9.65mm

Turn-Off Delay Time :

39 ns

Rise Time :

81ns

Min Operating Temperature :

-55°C

Number of Terminations :

2

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Fall Time (Typ) :

62 ns

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Form :

Gull wing

Power Dissipation-Max :

3.8W Ta 140W Tc

Current Rating :

36A

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

74nC @ 5V

Number of Elements :

1

Length :

10.668mm

Published :

2004

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Drain to Source Breakdown Voltage :

100V

Case Connection :

DRAIN