IRL540NSTRR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

74nC @ 5V

Rds On (Max) @ Id, Vgs :

44m Ω @ 18A, 10V

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

100V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

30

JESD-30 Code :

R-PSSO-G2

Surface Mount :

yes

Series :

HEXFET®

Vgs(th) (Max) @ Id :

2V @ 250μA

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Case Connection :

DRAIN

Terminal Position :

Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pulsed Drain Current-Max (IDM) :

120A

DS Breakdown Voltage-Min :

100V

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

310 mJ

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

FET Type :

N-Channel

Number of Elements :

1

Mounting Type :

Surface Mount

Power Dissipation-Max :

3.8W Ta 140W Tc

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±16V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.053Ohm

Drain Current-Max (Abs) (ID) :

36A

Published :

1998

Current - Continuous Drain (Id) @ 25°C :

36A Tc

Number of Terminations :

2

Terminal Form :

Gull wing

RoHS Status :

Non-RoHS Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

JESD-609 Code :

e3