IRL540NSTRLPBF
- Mfr.Part #
- IRL540NSTRLPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 36A D2PAK
- Stock
- 54,199
- In Stock :
- 54,199
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Termination :
- SMD/SMT
- Number of Pins :
- 3
- Vgs (Max) :
- ±16V
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 3.8W Ta 140W Tc
- Current Rating :
- 36A
- Input Capacitance (Ciss) (Max) @ Vds :
- 1800pF @ 25V
- Rise Time :
- 81ns
- Turn-Off Delay Time :
- 39 ns
- Operating Mode :
- ENHANCEMENT MODE
- ECCN Code :
- EAR99
- Published :
- 2004
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 10V
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Nominal Vgs :
- 2 V
- Dual Supply Voltage :
- 100V
- Height :
- 4.826mm
- Case Connection :
- DRAIN
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Transistor Application :
- SWITCHING
- Width :
- 9.65mm
- Gate Charge (Qg) (Max) @ Vgs :
- 74nC @ 5V
- Recovery Time :
- 290 ns
- Resistance :
- 44mOhm
- Factory Lead Time :
- 12 Weeks
- Turn On Delay Time :
- 11 ns
- Threshold Voltage :
- 2V
- Number of Terminations :
- 2
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY
- Fall Time (Typ) :
- 62 ns
- Drain to Source Breakdown Voltage :
- 100V
- JESD-609 Code :
- e3
- JESD-30 Code :
- R-PSSO-G2
- Length :
- 10.668mm
- Power Dissipation :
- 3.8W
- Operating Temperature :
- -55°C~175°C TJ
- Gate to Source Voltage (Vgs) :
- 16V
- Current - Continuous Drain (Id) @ 25°C :
- 36A Tc
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Series :
- HEXFET®
- Voltage - Rated DC :
- 100V
- Continuous Drain Current (ID) :
- 36A
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Terminal Form :
- Gull wing
- Rds On (Max) @ Id, Vgs :
- 44m Ω @ 18A, 10V
- Peak Reflow Temperature (Cel) :
- 260
- FET Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Element Configuration :
- Single
- Datasheets
- IRL540NSTRLPBF

N-Channel Tape & Reel (TR) 44m Ω @ 18A, 10V ±16V 1800pF @ 25V 74nC @ 5V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQP20N06 Description
Intemational Rectifier's Fifth Generation HEXFETs employ cutting-edge processing methods to provide incredibly low on-resistanee per silicon area. This feature, along with the quick switching speed and ruggedized device architecture that are well-known characteristics of HEXFET Power MOSFETs, gives the designer access to a very sophisticated and dependable device for usage in a range of applications. A surface mount power package called the D2Pak can support d-sizes up to HEX-4. It has the lowest on-resistance and maximum power capability of any surface mount package currently available. Due to its low internal connection resistance and ability to dissipate up to 2.0W in a typical surface mount application, the D2Pak is appropriate for high current applications.
FQP20N06 Features
Technology for Advanced Processes
Mount Surface (IRL540NS)
Through-hole with a low profile (IRL540NL)
Operating Temperature: 175 °C
FQP20N06 Applications
Switching applications
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