IRL540NSPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

120A

Vgs(th) (Max) @ Id :

2V @ 250μA

Packaging :

Tube

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

36A

Time@Peak Reflow Temperature-Max (s) :

30

DS Breakdown Voltage-Min :

100V

Published :

1998

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Surface Mount :

yes

Transistor Element Material :

SILICON

Series :

HEXFET®

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Number of Elements :

1

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

74nC @ 5V

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.053Ohm

Mounting Type :

Surface Mount

FET Type :

N-Channel

Number of Terminations :

2

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Avalanche Energy Rating (Eas) :

310 mJ

Vgs (Max) :

±16V

Current - Continuous Drain (Id) @ 25°C :

36A Tc

Factory Lead Time :

7 Weeks

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

44m Ω @ 18A, 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Form :

Gull wing

Power Dissipation-Max :

3.8W Ta 140W Tc

Drain to Source Voltage (Vdss) :

100V

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)