IRL540NPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

No SVHC

Power Dissipation-Max :

140W Tc

Voltage - Rated DC :

100V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE

Current - Continuous Drain (Id) @ 25°C :

36A Tc

Case Connection :

DRAIN

Width :

4.69mm

Termination :

Through Hole

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

30

Nominal Vgs :

2 V

Rise Time :

81ns

Terminal Finish :

MATTE TIN OVER NICKEL

Recovery Time :

290 ns

Turn On Delay Time :

11 ns

Lead Free :

Lead Free

Dual Supply Voltage :

100V

JESD-609 Code :

e3

JEDEC-95 Code :

TO-220AB

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Current Rating :

36A

Threshold Voltage :

2V

Number of Pins :

3

Number of Elements :

1

Continuous Drain Current (ID) :

36A

Turn-Off Delay Time :

39 ns

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Gate to Source Voltage (Vgs) :

16V

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 25V

Vgs (Max) :

±16V

Length :

10.5156mm

Package / Case :

TO-220-3

Rds On (Max) @ Id, Vgs :

44m Ω @ 18A, 10V

Factory Lead Time :

12 Weeks

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

74nC @ 5V

Operating Temperature :

-55°C~175°C TJ

Drain to Source Breakdown Voltage :

100V

Power Dissipation :

140W

Mount :

Through Hole

Mounting Type :

Through Hole

Resistance :

53mOhm

Series :

HEXFET®

Height :

15.24mm

Fall Time (Typ) :

62 ns

Element Configuration :

Single

Vgs(th) (Max) @ Id :

2V @ 250μA

Radiation Hardening :

No

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Lead Pitch :

2.54mm

Published :

1998

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

250