IRL540
- Mfr.Part #
- IRL540
- Manufacturer
- Vishay
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 28A TO220AB
- Stock
- 5,812
- In Stock :
- 5,812
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 64nC @ 5V
- Vgs (Max) :
- ±10V
- Operating Temperature :
- -55°C~175°C TJ
- Power Dissipation-Max :
- 150W Tc
- Mounting Type :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 28A Tc
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Width :
- 4.7mm
- Mount :
- Through Hole
- Number of Channels :
- 1
- Drain to Source Voltage (Vdss) :
- 100V
- RoHS Status :
- Non-RoHS Compliant
- Element Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 5V
- Radiation Hardening :
- No
- Length :
- 10.54mm
- Package / Case :
- TO-220-3
- Supplier Device Package :
- TO-220AB
- Packaging :
- Tube
- Number of Elements :
- 1
- Fall Time (Typ) :
- 80 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 2200pF @ 25V
- Height :
- 8.76mm
- Drain to Source Breakdown Voltage :
- 100V
- Max Operating Temperature :
- 175°C
- Power Dissipation :
- 150W
- Min Operating Temperature :
- -55°C
- FET Type :
- N-Channel
- Rise Time :
- 170ns
- Gate to Source Voltage (Vgs) :
- 10V
- Rds On (Max) @ Id, Vgs :
- 77mOhm @ 17A, 5V
- Turn On Delay Time :
- 8.5 ns
- Continuous Drain Current (ID) :
- 28A
- Published :
- 2011
- Drain to Source Resistance :
- 77mOhm
- Weight :
- 6.000006g
- Turn-Off Delay Time :
- 35 ns
- Rds On Max :
- 77 mΩ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance :
- 2.2nF
- Datasheets
- IRL540
N-Channel Tube 77mOhm @ 17A, 5V ±10V 2200pF @ 25V 64nC @ 5V 100V TO-220-3
IRL540 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2200pF @ 25V.This device conducts a continuous drain current (ID) of 28A, which is the maximum continuous current transistor can conduct.Using VGS=100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 100V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 35 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 77mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 8.5 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 10V.This transistor requires a drain-source voltage (Vdss) of 100V.In order to reduce power consumption, this device uses a drive voltage of 4V 5V volts (4V 5V).
IRL540 Features
a continuous drain current (ID) of 28A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 35 ns
single MOSFETs transistor is 77mOhm
a 100V drain to source voltage (Vdss)
IRL540 Applications
There are a lot of Vishay Siliconix
IRL540 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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