IRL530NSTRRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

3.8W Ta 79W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

JESD-30 Code :

R-PSSO-G2

Drain Current-Max (Abs) (ID) :

17A

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Operating Temperature :

-55°C~175°C TJ

DS Breakdown Voltage-Min :

100V

Terminal Position :

Single

Drain-source On Resistance-Max :

0.12Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

60A

Avalanche Energy Rating (Eas) :

150 mJ

Vgs(th) (Max) @ Id :

2V @ 250μA

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Series :

HEXFET®

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

100V

Rds On (Max) @ Id, Vgs :

100m Ω @ 9A, 10V

Case Connection :

DRAIN

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

800pF @ 25V

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Published :

2004

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

30

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Surface Mount :

yes

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Number of Terminations :

2