IRL530NSTRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

3.8W Ta 79W Tc

Series :

HEXFET®

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Termination :

SMD/SMT

JESD-609 Code :

e3

Resistance :

120mOhm

Number of Terminations :

2

Voltage - Rated DC :

100V

Mounting Type :

Surface Mount

Width :

9.65mm

Published :

2004

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 5V

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Time@Peak Reflow Temperature-Max (s) :

30

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

800pF @ 25V

Recovery Time :

210 ns

Peak Reflow Temperature (Cel) :

260

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Dual Supply Voltage :

100V

Drain to Source Breakdown Voltage :

100V

Vgs(th) (Max) @ Id :

2V @ 250μA

Threshold Voltage :

2V

Case Connection :

DRAIN

Radiation Hardening :

No

Turn On Delay Time :

7.2 ns

Current Rating :

17A

Transistor Application :

SWITCHING

Height :

4.826mm

Number of Elements :

1

Turn-Off Delay Time :

30 ns

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

Power Dissipation :

3.8W

Pulsed Drain Current-Max (IDM) :

60A

Nominal Vgs :

2 V

Element Configuration :

Single

Lead Free :

Contains Lead, Lead Free

Factory Lead Time :

12 Weeks

JESD-30 Code :

R-PSSO-G2

Length :

10.668mm

Mount :

Surface Mount

Continuous Drain Current (ID) :

17A

Number of Pins :

3

Rise Time :

53ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

100m Ω @ 9A, 10V

REACH SVHC :

No SVHC

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

26 ns

ECCN Code :

EAR99