IRL530NSTRL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

HEXFET®

Case Connection :

DRAIN

Current Rating :

17A

Published :

2004

Recovery Time :

210 ns

Dual Supply Voltage :

100V

Turn On Delay Time :

7.2 ns

Turn-Off Delay Time :

30 ns

Radiation Hardening :

No

Lead Free :

Contains Lead, Lead Free

Nominal Vgs :

2 V

Power Dissipation :

3.8W

Number of Terminations :

2

Peak Reflow Temperature (Cel) :

260

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Number of Pins :

3

Threshold Voltage :

2V

JESD-30 Code :

R-PSSO-G2

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Element Configuration :

Single

REACH SVHC :

No SVHC

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

60A

Factory Lead Time :

12 Weeks

Drain to Source Breakdown Voltage :

100V

Input Capacitance (Ciss) (Max) @ Vds :

800pF @ 25V

Vgs(th) (Max) @ Id :

2V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

17A

Fall Time (Typ) :

26 ns

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Rise Time :

53ns

Power Dissipation-Max :

3.8W Ta 79W Tc

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Termination :

SMD/SMT

Height :

4.826mm

Voltage - Rated DC :

100V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Mount :

Surface Mount

Length :

10.668mm

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 5V

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

30

Width :

9.65mm

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Rds On (Max) @ Id, Vgs :

100m Ω @ 9A, 10V

Resistance :

120mOhm

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~175°C TJ