IRL530NSPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

2

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Drain-source On Resistance-Max :

0.12Ohm

Series :

HEXFET®

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

DS Breakdown Voltage-Min :

100V

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

800pF @ 25V

Terminal Position :

Single

Power Dissipation-Max :

3.8W Ta 79W Tc

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

100V

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Drain Current-Max (Abs) (ID) :

17A

Published :

2004

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 5V

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

150 mJ

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

60A

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Packaging :

Tube

JESD-30 Code :

R-PSSO-G2

Vgs(th) (Max) @ Id :

2V @ 250μA

Time@Peak Reflow Temperature-Max (s) :

30

Rds On (Max) @ Id, Vgs :

100m Ω @ 9A, 10V

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE