IRL520S
- Mfr.Part #
- IRL520S
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 9.2A D2PAK
- Stock
- 19,345
- In Stock :
- 19,345
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- Non-RoHS Compliant
- Number of Channels :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 12nC @ 5V
- Rds On Max :
- 270 mΩ
- Voltage - Rated DC :
- 100V
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Mounting Type :
- Surface Mount
- Turn On Delay Time :
- 9.8 ns
- Operating Temperature :
- -55°C~175°C TJ
- Drain to Source Breakdown Voltage :
- 100V
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 3.7W Ta 60W Tc
- Number of Pins :
- 3
- Element Configuration :
- Single
- Mount :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 270mOhm @ 5.5A, 5V
- Weight :
- 1.437803g
- Current Rating :
- 9.2A
- Published :
- 2009
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Input Capacitance (Ciss) (Max) @ Vds :
- 490pF @ 25V
- Turn-Off Delay Time :
- 21 ns
- Packaging :
- Tube
- Continuous Drain Current (ID) :
- 9.2A
- Width :
- 9.65mm
- Min Operating Temperature :
- -55°C
- Lead Free :
- Contains Lead
- Rise Time :
- 64ns
- Current - Continuous Drain (Id) @ 25°C :
- 9.2A Tc
- Length :
- 10.67mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 5V
- Drain to Source Voltage (Vdss) :
- 100V
- Fall Time (Typ) :
- 27 ns
- Vgs (Max) :
- ±10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Supplier Device Package :
- D2PAK
- Drain to Source Resistance :
- 270mOhm
- Gate to Source Voltage (Vgs) :
- 10V
- Height :
- 4.83mm
- Max Operating Temperature :
- 175°C
- Input Capacitance :
- 490pF
- Datasheets
- IRL520S
N-Channel Tube 270mOhm @ 5.5A, 5V ±10V 490pF @ 25V 12nC @ 5V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRL520S Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 490pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 9.2A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 100V, and this device has a drainage-to-source breakdown voltage of 100VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 21 ns.This device has a drain-to-source resistance of 270mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9.8 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 10V to 1.For this transistor to work, a voltage 100V is required between drain and source (Vdss).Using drive voltage (4V 5V), this device contributes to a reduction in overall power consumption.
IRL520S Features
a continuous drain current (ID) of 9.2A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 21 ns
single MOSFETs transistor is 270mOhm
a 100V drain to source voltage (Vdss)
IRL520S Applications
There are a lot of Vishay Siliconix
IRL520S applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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