IRL520NSTRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current Rating :

10A

Power Dissipation-Max :

3.8W Ta 48W Tc

Turn-Off Delay Time :

23 ns

Radiation Hardening :

No

Continuous Drain Current (ID) :

10A

Resistance :

180mOhm

Series :

HEXFET®

Number of Elements :

1

Fall Time (Typ) :

22 ns

Dual Supply Voltage :

100V

Threshold Voltage :

2V

Case Connection :

DRAIN

JESD-609 Code :

e3

Additional Feature :

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY

Drain to Source Breakdown Voltage :

100V

Height :

4.826mm

RoHS Status :

ROHS3 Compliant

Power Dissipation :

3.8W

Vgs (Max) :

±16V

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

Avalanche Energy Rating (Eas) :

85 mJ

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

2V @ 250μA

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Factory Lead Time :

12 Weeks

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 5V

Rise Time :

35ns

Mounting Type :

Surface Mount

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

JESD-30 Code :

R-PSSO-G2

Voltage - Rated DC :

100V

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

30

FET Type :

N-Channel

Length :

10.668mm

Mount :

Surface Mount

Transistor Application :

SWITCHING

Number of Terminations :

2

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

180m Ω @ 6A, 10V

Gate to Source Voltage (Vgs) :

16V

Lead Free :

Contains Lead, Lead Free

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

4 ns

Termination :

SMD/SMT

Recovery Time :

160 ns

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Published :

2004

Width :

9.65mm

Nominal Vgs :

2 V