IRL520NSTRL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

10A

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

100V

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 25V

Rds On (Max) @ Id, Vgs :

180m Ω @ 6A, 10V

Terminal Position :

Single

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

30

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Additional Feature :

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Vgs(th) (Max) @ Id :

2V @ 250μA

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Number of Elements :

1

RoHS Status :

Non-RoHS Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

JESD-30 Code :

R-PSSO-G2

Vgs (Max) :

±16V

Reach Compliance Code :

not_compliant

Surface Mount :

yes

Transistor Application :

SWITCHING

Published :

1998

Avalanche Energy Rating (Eas) :

85 mJ

Pulsed Drain Current-Max (IDM) :

35A

Series :

HEXFET®

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

DS Breakdown Voltage-Min :

100V

Power Dissipation-Max :

3.8W Ta 48W Tc

Drain-source On Resistance-Max :

0.22Ohm

Peak Reflow Temperature (Cel) :

260

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 5V