IRGR4607DPBF
- Mfr.Part #
- IRGR4607DPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- IGBT 600V 11A 58W DPAK
- Stock
- 39,835
- In Stock :
- 39,835
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Number of Elements :
- 1
- Switching Energy :
- 140μJ (on), 62μJ (off)
- ECCN Code :
- EAR99
- Input Type :
- Standard
- Td (on/off) @ 25°C :
- 27ns/120ns
- Turn On Time :
- 51 ns
- Transistor Application :
- POWER CONTROL
- Polarity/Channel Type :
- N-Channel
- Packaging :
- Tube
- Max Collector Current :
- 11A
- Height :
- 4.83mm
- Element Configuration :
- Single
- Turn Off Time-Nom (toff) :
- 95 ns
- Collector Emitter Breakdown Voltage :
- 600V
- Published :
- 2013
- Power - Max :
- 58W
- Mount :
- Surface Mount
- Gate Charge :
- 9nC
- Max Power Dissipation :
- 58W
- Width :
- 9.65mm
- Collector Emitter Voltage (VCEO) :
- 2.05V
- Reverse Recovery Time :
- 48 ns
- Terminal Form :
- Gull wing
- Current - Collector Pulsed (Icm) :
- 12A
- JEDEC-95 Code :
- TO-252AA
- Vce(on) (Max) @ Vge, Ic :
- 2.05V @ 15V, 4A
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 2
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Case Connection :
- COLLECTOR
- JESD-30 Code :
- R-PSSO-G2
- Length :
- 10.67mm
- Operating Temperature :
- -40°C~175°C TJ
- Test Condition :
- 400V, 4A, 100 Ω, 15V
- REACH SVHC :
- No SVHC
- Number of Pins :
- 3
- Collector Emitter Saturation Voltage :
- 1.75V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- RoHS Compliant
- Weight :
- 350.003213mg
- Transistor Element Material :
- SILICON
- Reach Compliance Code :
- Unknown
- Datasheets
- IRGR4607DPBF

IRGR4607DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRGR4607DPBF Description
The fundamental function of the IGBT is rather simple. A positive voltage UGE from gate to emitter turns on the MOSFET. Then, the voltage connected to the collector can drive the base current through the bipolar transistor and the MOSFET; the bipolar transistor turns on and the load current can flow.
IRGR4607DPBF Applications
? Industrial Motor Drive
? UPS
? Solar Inverters
? Welding
IRGR4607DPBF Features
LowVCEoNand Switching Losses
5us Short Circuit SOA
Square RBSOA
Maximum Junction Temperature175℃
Positive VCE ONTemperature Coefficient
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