IRGR2B60KDTRRPBF
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- Mfr.Part #
- IRGR2B60KDTRRPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- IRGR2B60 - DISCRETE IGBT WITH AN
- Stock
- 18,980
- In Stock ：
- 18,980
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - IGBTs - Single
- Mount :
- Surface Mount
- Current - Collector Pulsed (Icm) :
- 8A
- Radiation Hardening :
- No
- Td (on/off) @ 25°C :
- 11ns/150ns
- Rise Time-Max :
- 25ns
- Gate-Emitter Thr Voltage-Max :
- 6V
- IGBT Type :
- NPT
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 13 Weeks
- Mounting Type :
- Surface Mount
- Base Part Number :
- IRGR2B60
- Switching Energy :
- 74μJ (on), 39μJ (off)
- Test Condition :
- 400V, 2A, 100 Ω, 15V
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Fall Time-Max (tf) :
- 75ns
- Gate-Emitter Voltage-Max :
- 20V
- Collector Emitter Breakdown Voltage :
- 600V
- Vce(on) (Max) @ Vge, Ic :
- 2.25V @ 15V, 2A
- Published :
- 2013
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Polarity/Channel Type :
- N-Channel
- Max Power Dissipation :
- 35W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Max Collector Current :
- 6.3A
- RoHS Status :
- ROHS3 Compliant
- Gate Charge :
- 12nC
- Input Type :
- Standard
- Collector Emitter Voltage (VCEO) :
- 2.25V
- Reverse Recovery Time :
- 68 ns
- Power - Max :
- 35W
- Datasheets
- IRGR2B60KDTRRPBF
IRGR2B60KDTRRPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRGR2B60KDTRRPBF Description
IRGR2B60KDTRRPBF manufactured by Infineon Technologies is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode, which is used to provide benchmark efficiency in motor control. Excellent current sharing in parallel operation can be delivered due to its positive VCE(ON) temperature coefficient and tighter distribution of parameters. It is able to provide low VCE (on) non-punch through IGBT technology. Moreover, the IRGR2B60KDTRRPBF IGBT delivers rugged transient performance and low EMI.
IRGR2B60KDTRRPBF Features
Low diode VF
10μs short circuit capability
Square RBSOA
Ultrasoft diode reverse recovery characteristics
Positive VCE (on) temperature coefficient
IRGR2B60KDTRRPBF Applications
UPS
Motor control
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