IRGR3B60KD2TRRP
- Mfr.Part #
- IRGR3B60KD2TRRP
- Manufacturer
- International Rectifier
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- IGBTWITH ULTRA-FAST SOFT RECOVER
- Stock
- 16,061
- In Stock :
- 16,061
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - IGBTs - Single
- Test Condition :
- 400V, 3A, 100 Ω, 15V
- Element Configuration :
- Single
- Vce(on) (Max) @ Vge, Ic :
- 2.4V @ 15V, 3A
- Mount :
- Surface Mount
- Switching Energy :
- 62μJ (on), 39μJ (off)
- Transistor Element Material :
- SILICON
- Reverse Recovery Time :
- 77 ns
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Number of Pins :
- 3
- Max Power Dissipation :
- 52W
- Td (on/off) @ 25°C :
- 18ns/110ns
- Input Type :
- Standard
- Transistor Application :
- Motor Control
- Gate Charge :
- 13nC
- Peak Reflow Temperature (Cel) :
- 260
- JESD-609 Code :
- e3
- Power - Max :
- 52W
- Turn Off Time-Nom (toff) :
- 211 ns
- Current - Collector Pulsed (Icm) :
- 15.6A
- Packaging :
- Tape and Reel (TR)
- Gate-Emitter Voltage-Max :
- 20V
- IGBT Type :
- NPT
- Collector Emitter Voltage (VCEO) :
- 2.4V
- Rise Time-Max :
- 22ns
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 13 Weeks
- Gate-Emitter Thr Voltage-Max :
- 5.5V
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- N-Channel
- Published :
- 2003
- JESD-30 Code :
- R-PSSO-G2
- Max Collector Current :
- 7.8A
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Fall Time-Max (tf) :
- 105ns
- Turn On Time :
- 35 ns
- Number of Terminations :
- 2
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Collector Emitter Breakdown Voltage :
- 600V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Base Part Number :
- IRGR3B60KD2PBF
- Radiation Hardening :
- No
- JEDEC-95 Code :
- TO-252AA
- Datasheets
- IRGR3B60KD2TRRP

IRGR3B60KD2TRRP datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRGR3B60KD2TRRP Description
The Infineon Technologies IRGR3B60KD2TRRP is an insulated gate bipolar transistor with an ultrafast soft recovery diode.
IRGR3B60KD2TRRP Features
-
Low VCE (on) Non-Punch Through IGBT Technology.
-
Low Diode VF.
-
10μs Short Circuit Capability.
-
Square RBSOA.
-
Ultrasoft Diode Reverse Recovery Characteristics.
-
Positive VCE (on) Temperature Coefficient.
-
Lead-Free
IRGR3B60KD2TRRP Applications
-
Motor Driver Control
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