IRGR3B60KD2TRRP

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Time@Peak Reflow Temperature-Max (s) :

30

Rise Time-Max :

22ns

Packaging :

Tape and Reel (TR)

Vce(on) (Max) @ Vge, Ic :

2.4V @ 15V, 3A

Max Power Dissipation :

52W

Mount :

Surface Mount

Radiation Hardening :

No

JESD-30 Code :

R-PSSO-G2

Turn Off Time-Nom (toff) :

211 ns

Turn On Time :

35 ns

Element Configuration :

Single

Number of Elements :

1

Number of Terminations :

2

Gate-Emitter Thr Voltage-Max :

5.5V

Switching Energy :

62μJ (on), 39μJ (off)

Transistor Element Material :

SILICON

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Max Collector Current :

7.8A

Gate Charge :

13nC

Input Type :

Standard

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

2.4V

JEDEC-95 Code :

TO-252AA

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

IGBT Type :

NPT

Test Condition :

400V, 3A, 100 Ω, 15V

Factory Lead Time :

13 Weeks

JESD-609 Code :

e3

Number of Pins :

3

Polarity/Channel Type :

N-Channel

Published :

2003

Transistor Application :

Motor Control

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Gate-Emitter Voltage-Max :

20V

Mounting Type :

Surface Mount

Current - Collector Pulsed (Icm) :

15.6A

Fall Time-Max (tf) :

105ns

Td (on/off) @ 25°C :

18ns/110ns

Collector Emitter Breakdown Voltage :

600V

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Power - Max :

52W

Reverse Recovery Time :

77 ns

Base Part Number :

IRGR3B60KD2PBF