IRGR2B60KDTRRPBF
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- Mfr.Part #
- IRGR2B60KDTRRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- IGBT NPT 600V 6.3A DPAK
- Stock
- 36,179
- In Stock ：
- 36,179
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Input Type :
- Standard
- RoHS Status :
- ROHS3 Compliant
- Vce(on) (Max) @ Vge, Ic :
- 2.25V @ 15V, 2A
- Packaging :
- Tape and Reel (TR)
- Power - Max :
- 35W
- Td (on/off) @ 25°C :
- 11ns/150ns
- Collector Emitter Breakdown Voltage :
- 600V
- Number of Pins :
- 3
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time-Max :
- 25ns
- Factory Lead Time :
- 13 Weeks
- Gate-Emitter Voltage-Max :
- 20V
- Switching Energy :
- 74μJ (on), 39μJ (off)
- Test Condition :
- 400V, 2A, 100 Ω, 15V
- Reverse Recovery Time :
- 68 ns
- Current - Collector Pulsed (Icm) :
- 8A
- Collector Emitter Voltage (VCEO) :
- 2.25V
- Gate-Emitter Thr Voltage-Max :
- 6V
- Operating Temperature :
- -55°C~150°C TJ
- Base Part Number :
- IRGR2B60
- Gate Charge :
- 12nC
- IGBT Type :
- NPT
- Published :
- 2013
- ECCN Code :
- EAR99
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Polarity/Channel Type :
- N-Channel
- Fall Time-Max (tf) :
- 75ns
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Max Collector Current :
- 6.3A
- Max Power Dissipation :
- 35W
- Mounting Type :
- Surface Mount
- Datasheets
- IRGR2B60KDTRRPBF
IRGR2B60KDTRRPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRGR2B60KDTRRPBF Description
IRGR2B60KDTRRPBF manufactured by Infineon Technologies is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode, which is used to provide benchmark efficiency in motor control. Excellent current sharing in parallel operation can be delivered due to its positive VCE(ON) temperature coefficient and tighter distribution of parameters. It is able to provide low VCE (on) non-punch through IGBT technology. Moreover, the IRGR2B60KDTRRPBF IGBT delivers rugged transient performance and low EMI.
IRGR2B60KDTRRPBF Features
Low diode VF
10μs short circuit capability
Square RBSOA
Ultrasoft diode reverse recovery characteristics
Positive VCE (on) temperature coefficient
IRGR2B60KDTRRPBF Applications
UPS
Motor control
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