IRGR4045DTRPBF
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- Mfr.Part #
- IRGR4045DTRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- IGBT 600V 12A 77W DPAK
- Stock
- 11,137
- In Stock ：
- 11,137
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Current - Collector Pulsed (Icm) :
- 18A
- Base Part Number :
- IRGR4045
- Packaging :
- Tape and Reel (TR)
- IGBT Type :
- Trench
- Test Condition :
- 400V, 6A, 47 Ω, 15V
- Gate Charge :
- 19.5nC
- Mounting Type :
- Surface Mount
- REACH SVHC :
- No SVHC
- Max Collector Current :
- 12A
- Factory Lead Time :
- 19 Weeks
- Fall Time-Max (tf) :
- 22ns
- Gate-Emitter Voltage-Max :
- 20V
- Rise Time-Max :
- 15ns
- Max Power Dissipation :
- 77W
- Collector Emitter Saturation Voltage :
- 1.7V
- Collector Emitter Voltage (VCEO) :
- 2V
- Switching Energy :
- 56μJ (on), 122μJ (off)
- Radiation Hardening :
- No
- Td (on/off) @ 25°C :
- 27ns/75ns
- Lead Free :
- Lead Free
- Power - Max :
- 77W
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- ECCN Code :
- EAR99
- Published :
- 2012
- RoHS Status :
- RoHS Compliant
- Vce(on) (Max) @ Vge, Ic :
- 2V @ 15V, 6A
- Input Type :
- Standard
- Mount :
- Surface Mount
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate-Emitter Thr Voltage-Max :
- 6.5V
- Reverse Recovery Time :
- 74 ns
- Element Configuration :
- Single
- Polarity/Channel Type :
- N-Channel
- Operating Temperature :
- -55°C~175°C TJ
- Collector Emitter Breakdown Voltage :
- 600V
- Datasheets
- IRGR4045DTRPBF
IRGR4045DTRPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRGR4045DTRPBF Description
IRGR4045DTRPBF is a 600v insulated gate bipolar transistor with an ultrafast soft recovery diode. The Infineon IRGR4045DTRPBF is suitable for a wide range of switching frequencies due to low VCE(on) and low switching losses. The Operating and Storage Temperature Range is between -55 and 175℃. And the transistor IRGR4045DTRPBF is in the D-Pak package with 77W power dissipation.
IRGR4045DTRPBF Features
Low VCE (on) Trench IGBT Technology
Low Switching Losses
Maximum Junction temperature 175 °C
5μs SCSOA
Square RBSOA
100% of the parts tested for ILM
Positive VCE (on) Temperature Coefficient.
Ultra Fast Soft Recovery Co-Pak Diode
Tighter Distribution of Parameters
Lead-Free, RoHS Compliant
IRGR4045DTRPBF Applications
Automotive
Advanced driver assistance systems (ADAS)
Communications equipment
Wireless infrastructure
Enterprise systems
Enterprise machine
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