IRGIB6B60KD116P
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- Mfr.Part #
- IRGIB6B60KD116P
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- IGBT 600V 11A 38W TO220FP
- Stock
- 16,648
- In Stock ：
- 16,648
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Operating Temperature :
- -55°C~175°C TJ
- Power - Max :
- 38W
- Voltage - Collector Emitter Breakdown (Max) :
- 600V
- Td (on/off) @ 25°C :
- 25ns/215ns
- Current - Collector (Ic) (Max) :
- 11A
- Switching Energy :
- 110μJ (on), 135μJ (off)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2004
- Mounting Type :
- Through Hole
- Reverse Recovery Time :
- 70ns
- Gate Charge :
- 18.2nC
- Package / Case :
- TO-220-3 Full Pack
- Test Condition :
- 400V, 5A, 100 Ω, 15V
- Packaging :
- Tube
- IGBT Type :
- NPT
- Vce(on) (Max) @ Vge, Ic :
- 2.2V @ 15V, 5A
- Current - Collector Pulsed (Icm) :
- 22A
- Input Type :
- Standard
- Datasheets
- IRGIB6B60KD116P
IRGIB6B60KD116P datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRGIB6B60KD116P Description
IRGIB6B60KD116P transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRGIB6B60KD116P MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies IRGIB6B60KD116P has the common source configuration.
IRGIB6B60KD116P Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging
IRGIB6B60KD116P Applications
ISM applications
DC large signal applications
Power factor correction
Electronic lamp ballasts
Flat panel display
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