IRG7PH42UD1MPBF

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Mfr.Part #
IRG7PH42UD1MPBF
Manufacturer
Infineon Technologies
Package / Case
TO-247-3
Datasheet
Download
Description
IGBT 1200V 85A 313W TO247AD
Stock
39,888
In Stock :
39,888

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Single
Max Collector Current :
85A
Weight :
6.500007g
Td (on/off) @ 25°C :
-/270ns
Mount :
Through Hole
Vce(on) (Max) @ Vge, Ic :
2V @ 15V, 30A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Element Configuration :
Single
ECCN Code :
EAR99
Gate-Emitter Thr Voltage-Max :
6V
Mounting Type :
Through Hole
Polarity/Channel Type :
N-Channel
RoHS Status :
RoHS Compliant
Package / Case :
TO-247-3
Current - Collector Pulsed (Icm) :
200A
IGBT Type :
Trench
Power - Max :
313W
Input Type :
Standard
Voltage - Collector Emitter Breakdown (Max) :
1200V
Max Power Dissipation :
313W
Lead Free :
Lead Free
Collector Emitter Breakdown Voltage :
1.2kV
Test Condition :
600V, 30A, 10 Ω, 15V
Radiation Hardening :
No
Collector Emitter Saturation Voltage :
1.7V
Operating Temperature :
-55°C~150°C TJ
Packaging :
Tube
Published :
2013
Gate Charge :
270nC
Switching Energy :
1.21mJ (off)
Number of Pins :
3
Collector Emitter Voltage (VCEO) :
2V
Datasheets
IRG7PH42UD1MPBF
Introducing Transistors - IGBTs - Single Infineon Technologies IRG7PH42UD1MPBF from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-247-3, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, IRG7PH42UD1MPBF pinout, IRG7PH42UD1MPBF datasheet PDF, IRG7PH42UD1MPBF amp .Beyond Transistors - IGBTs - Single Infineon Technologies IRG7PH42UD1MPBF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRG7PH42UD1MPBF


IRG7PH42UD1MPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IRG7PH42UD1MPBF Description


IRG7PH42UD1MPBF is a 1200v insulated gate bipolar transistor with an ultra-low VF diode. The Infineon IRG7PH42UD1MPBF is optimized for induction heating and soft-switching applications. The IRG7PH42UD1MPBF provides High Efficiency due to Low VCE(on), low switching losses, and Ultra-low VF. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor IRG7PH42UD1MPBF is in the TO-247AD package with 313W power dissipation.



IRG7PH42UD1MPBF Features


Low VcE (ON) trench IGBT technology

Low switching losses

Square RBSOA

Ultra-low VF Diode

1300Vpk repetitive transient capacity

100% of the parts tested for LM①

Positive VcE (ON) temperature coefficient

Tight parameter distribution

Lead-free package



IRG7PH42UD1MPBF Applications


Automotive 

Hybrid, electric & powertrain systems 

Communications equipment 

Datacom module 

Enterprise systems 

Enterprise machine


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