IRFR5305PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

P-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

280 mJ

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Series :

HEXFET®

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

JEDEC-95 Code :

TO-252AA

Operating Mode :

ENHANCEMENT MODE

Published :

2000

DS Breakdown Voltage-Min :

55V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

31A

Terminal Position :

Single

Power Dissipation-Max :

110W Tc

Current - Continuous Drain (Id) @ 25°C :

31A Tc

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

Number of Terminations :

2

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

HTS Code :

8541.29.00.95

Drain to Source Voltage (Vdss) :

55V

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

65m Ω @ 16A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 25V

Case Connection :

DRAIN

Reach Compliance Code :

not_compliant

Pulsed Drain Current-Max (IDM) :

110A

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-30 Code :

R-PSSO-G2

Packaging :

Tube

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

Number of Elements :

1

Surface Mount :

yes

Drain-source On Resistance-Max :

0.065Ohm