IRFR014TR
- Mfr.Part #
- IRFR014TR
- Manufacturer
- Vishay
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 7.7A DPAK
- Stock
- 2,219
- In Stock :
- 2,219
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Breakdown Voltage :
- 60V
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Contains Lead
- Power Dissipation :
- 2.5W
- Mount :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 11nC @ 10V
- Max Operating Temperature :
- 150°C
- Voltage - Rated DC :
- 60V
- Input Capacitance :
- 300pF
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Delay Time :
- 10 ns
- Drain to Source Voltage (Vdss) :
- 60V
- Supplier Device Package :
- D-Pak
- Drain to Source Resistance :
- 200mOhm
- Rise Time :
- 50ns
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 300pF @ 25V
- Gate to Source Voltage (Vgs) :
- 20V
- FET Type :
- N-Channel
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 7.7A Tc
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Continuous Drain Current (ID) :
- 7.7A
- Rds On (Max) @ Id, Vgs :
- 200mOhm @ 4.6A, 10V
- Number of Pins :
- 3
- Current Rating :
- 7.7A
- Radiation Hardening :
- No
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS Status :
- Non-RoHS Compliant
- Vgs (Max) :
- ±20V
- Published :
- 2016
- Power Dissipation-Max :
- 2.5W Ta 25W Tc
- Operating Temperature :
- -55°C~150°C TJ
- Rds On Max :
- 200 mΩ
- Turn-Off Delay Time :
- 13 ns
- Element Configuration :
- Single
- Fall Time (Typ) :
- 19 ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Min Operating Temperature :
- -55°C
- Number of Channels :
- 1
- Datasheets
- IRFR014TR
N-Channel Tape & Reel (TR) 200mOhm @ 4.6A, 10V ±20V 300pF @ 25V 11nC @ 10V 60V TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR014TR Overview
A device's maximal input capacitance is 300pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 7.7A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 60V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 13 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 200mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 60V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRFR014TR Features
a continuous drain current (ID) of 7.7A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 13 ns
single MOSFETs transistor is 200mOhm
a 60V drain to source voltage (Vdss)
IRFR014TR Applications
There are a lot of Vishay Siliconix
IRFR014TR applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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