IRFR010
- Mfr.Part #
- IRFR010
- Manufacturer
- Vishay
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 50V 8.2A DPAK
- Stock
- 18,183
- In Stock :
- 18,183
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Resistance :
- 200mOhm
- Current - Continuous Drain (Id) @ 25°C :
- 8.2A Tc
- Number of Channels :
- 1
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Supplier Device Package :
- D-Pak
- Rds On Max :
- 200 mΩ
- Gate to Source Voltage (Vgs) :
- 20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Mounting Type :
- Surface Mount
- Turn-Off Delay Time :
- 13 ns
- Max Operating Temperature :
- 175°C
- Element Configuration :
- Single
- Drain to Source Voltage (Vdss) :
- 50V
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Contains Lead
- Packaging :
- Tube
- Power Dissipation-Max :
- 25W Tc
- Voltage - Rated DC :
- 50V
- Fall Time (Typ) :
- 19 ns
- RoHS Status :
- Non-RoHS Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 10nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Delay Time :
- 10 ns
- Input Capacitance :
- 250pF
- Rds On (Max) @ Id, Vgs :
- 200mOhm @ 4.6A, 10V
- Mount :
- Surface Mount
- Current Rating :
- 8.2A
- Input Capacitance (Ciss) (Max) @ Vds :
- 250pF @ 25V
- Number of Pins :
- 3
- Min Operating Temperature :
- -55°C
- Drain to Source Breakdown Voltage :
- 60V
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 8.2A
- Published :
- 2016
- Rise Time :
- 50ns
- Vgs (Max) :
- ±20V
- Datasheets
- IRFR010
N-Channel Tube 200mOhm @ 4.6A, 10V ±20V 250pF @ 25V 10nC @ 10V 50V TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR010 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 250pF @ 25V.This device has a continuous drain current (ID) of [8.2A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=60V, the drain-source breakdown voltage is 60V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 13 ns.MOSFETs have 200mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 50V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IRFR010 Features
a continuous drain current (ID) of 8.2A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 13 ns
single MOSFETs transistor is 200mOhm
a 50V drain to source voltage (Vdss)
IRFR010 Applications
There are a lot of Vishay Siliconix
IRFR010 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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