IRFR010TRL
- Mfr.Part #
- IRFR010TRL
- Manufacturer
- Vishay
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 50V 8.2A DPAK
- Stock
- 18,004
- In Stock :
- 18,004
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Channels :
- 1
- Turn-Off Delay Time :
- 13 ns
- Pulsed Drain Current-Max (IDM) :
- 33A
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Form :
- Gull wing
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Packaging :
- Tape and Reel (TR)
- JESD-30 Code :
- R-PSSO-G2
- Drain to Source Breakdown Voltage :
- 60V
- Drain-source On Resistance-Max :
- 0.2Ohm
- Weight :
- 1.437803g
- Operating Temperature :
- -55°C~150°C TJ
- Qualification Status :
- Not Qualified
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Element Configuration :
- Single
- Drain to Source Voltage (Vdss) :
- 50V
- Rds On (Max) @ Id, Vgs :
- 200m Ω @ 4.6A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 10nC @ 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Rise Time :
- 50ns
- Gate to Source Voltage (Vgs) :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2016
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 2
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 250pF @ 25V
- Turn On Delay Time :
- 10 ns
- RoHS Status :
- Non-RoHS Compliant
- FET Type :
- N-Channel
- Vgs (Max) :
- ±20V
- Mount :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 8.2A Tc
- Power Dissipation-Max :
- 25W Tc
- Continuous Drain Current (ID) :
- 8.2A
- Number of Elements :
- 1
- Fall Time (Typ) :
- 19 ns
- JEDEC-95 Code :
- TO-252AA
- Datasheets
- IRFR010TRL
N-Channel Tape & Reel (TR) 200m Ω @ 4.6A, 10V ±20V 250pF @ 25V 10nC @ 10V 50V TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR010TRL Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 250pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 8.2A amps.In this device, the drain-source breakdown voltage is 60V and VGS=60V, so the drain-source breakdown voltage is 60V in this case.It is [13 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 33A.A turn-on delay time of 10 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 50V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IRFR010TRL Features
a continuous drain current (ID) of 8.2A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 13 ns
based on its rated peak drain current 33A.
a 50V drain to source voltage (Vdss)
IRFR010TRL Applications
There are a lot of Vishay Siliconix
IRFR010TRL applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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