IRFR010PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Vgs (Max) :

±20V

Published :

2016

Drain to Source Breakdown Voltage :

60V

Weight :

1.437803g

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

8.2A

Vgs(th) (Max) @ Id :

4V @ 250µA

Element Configuration :

Single

Turn On Delay Time :

10 ns

Pin Count :

3

Rds On (Max) @ Id, Vgs :

200m Ω @ 4.6A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

13 ns

Fall Time (Typ) :

19 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

8 Weeks

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

250

Case Connection :

DRAIN

Pbfree Code :

yes

Number of Channels :

1

Gate to Source Voltage (Vgs) :

20V

Rise Time :

50ns

Time@Peak Reflow Temperature-Max (s) :

40

Power Dissipation-Max :

25W Tc

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 25V

JESD-30 Code :

R-PSSO-G2

Drain-source On Resistance-Max :

0.2Ohm

Power Dissipation :

25W

Mounting Type :

Surface Mount

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

8.2A Tc

Terminal Finish :

Tin (Sn)

ECCN Code :

EAR99

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

50V

Number of Pins :

3

FET Type :

N-Channel

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 10V