IRFR3518TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Turn-Off Delay Time :

37 ns

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

1710pF @ 25V

Vgs(th) (Max) @ Id :

4V @ 250µA

Published :

2004

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

Height :

2.26mm

Factory Lead Time :

14 Weeks

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Voltage - Rated DC :

80V

Continuous Drain Current (ID) :

30A

REACH SVHC :

No SVHC

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

29m Ω @ 18A, 10V

Operating Mode :

ENHANCEMENT MODE

JEDEC-95 Code :

TO-252AA

Width :

6.22mm

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

110W

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Fall Time (Typ) :

13 ns

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Drain to Source Breakdown Voltage :

80V

Turn On Delay Time :

12 ns

Length :

6.7056mm

Radiation Hardening :

No

Terminal Form :

Gull wing

Nominal Vgs :

4 V

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Current Rating :

38A

Series :

HEXFET®

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Resistance :

29mOhm

JESD-30 Code :

R-PSSO-G2

Current - Continuous Drain (Id) @ 25°C :

38A Tc

Vgs (Max) :

±20V

Lead Free :

Lead Free

Power Dissipation-Max :

110W Tc

Number of Terminations :

2

Threshold Voltage :

4V

Dual Supply Voltage :

80V

Termination :

SMD/SMT

Element Configuration :

Single

Rise Time :

25ns