IRFR120ZPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

8.7A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 10V

Packaging :

Tube

Vgs(th) (Max) @ Id :

4V @ 250µA

Surface Mount :

yes

Operating Temperature :

-55°C~175°C TJ

Terminal Position :

Single

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

30

Current - Continuous Drain (Id) @ 25°C :

8.7A Tc

Rds On (Max) @ Id, Vgs :

190m Ω @ 5.2A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

310pF @ 25V

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

18 mJ

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Peak Reflow Temperature (Cel) :

260

Drain-source On Resistance-Max :

0.19Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

100V

Published :

2003

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Drain to Source Voltage (Vdss) :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Number of Elements :

1

JEDEC-95 Code :

TO-252AA

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

35W Tc

ECCN Code :

EAR99

JESD-30 Code :

R-PSSO-G2

Pulsed Drain Current-Max (IDM) :

35A

Terminal Form :

Gull wing

Case Connection :

DRAIN

Reach Compliance Code :

not_compliant

Number of Terminations :

2

Qualification Status :

Not Qualified

Vgs (Max) :

±20V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Series :

HEXFET®