IRFR1018EPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

46 ns

Published :

2008

Lead Free :

Lead Free

Length :

6.7056mm

Transistor Element Material :

SILICON

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Element Configuration :

Single

Drain to Source Breakdown Voltage :

60V

Transistor Application :

SWITCHING

Power Dissipation-Max :

110W Tc

Rds On (Max) @ Id, Vgs :

8.4m Ω @ 47A, 10V

Power Dissipation :

110W

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

56A Tc

Turn On Delay Time :

13 ns

Packaging :

Tube

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Factory Lead Time :

15 Weeks

FET Type :

N-Channel

Series :

HEXFET®

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.0084Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

6.22mm

REACH SVHC :

No SVHC

Drain Current-Max (Abs) (ID) :

56A

Number of Terminations :

2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

30

Operating Temperature :

-55°C~175°C TJ

Avalanche Energy Rating (Eas) :

88 mJ

Mounting Type :

Surface Mount

Threshold Voltage :

4V

Continuous Drain Current (ID) :

79A

Height :

2.3876mm

Peak Reflow Temperature (Cel) :

260

Turn-Off Delay Time :

55 ns

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Gate Charge (Qg) (Max) @ Vgs :

69nC @ 10V

Recovery Time :

39 ns

Case Connection :

DRAIN

Terminal Form :

Gull wing

Number of Elements :

1

JESD-30 Code :

R-PSSO-G2

Vgs(th) (Max) @ Id :

4V @ 100µA

JEDEC-95 Code :

TO-252AA

Rise Time :

35ns

Input Capacitance (Ciss) (Max) @ Vds :

2290pF @ 50V

Number of Pins :

3