IRFR1010ZPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Mount :

Surface Mount

Published :

2004

Continuous Drain Current (ID) :

42A

Input Capacitance (Ciss) (Max) @ Vds :

2840pF @ 25V

Voltage - Rated DC :

55V

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

95nC @ 10V

Rds On (Max) @ Id, Vgs :

7.5m Ω @ 42A, 10V

Vgs (Max) :

±20V

Length :

6.7056mm

Radiation Hardening :

No

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

JEDEC-95 Code :

TO-252AA

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

4V @ 100µA

Element Configuration :

Single

Termination :

SMD/SMT

Height :

2.3876mm

Rise Time :

76ns

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

140W Tc

Threshold Voltage :

4V

Avalanche Energy Rating (Eas) :

220 mJ

Lead Free :

Lead Free

Number of Elements :

1

FET Type :

N-Channel

Factory Lead Time :

14 Weeks

Turn On Delay Time :

17 ns

REACH SVHC :

No SVHC

Turn-Off Delay Time :

42 ns

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.0075Ohm

Number of Terminations :

2

Current Rating :

42A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Time@Peak Reflow Temperature-Max (s) :

30

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Nominal Vgs :

4 V

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Fall Time (Typ) :

48 ns

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

Power Dissipation :

140W

Series :

HEXFET®

Drain to Source Breakdown Voltage :

55V

Dual Supply Voltage :

55V

Width :

6.22mm

Packaging :

Tube

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2