IRFPF50PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

1997

Resistance :

1.6Ohm

Threshold Voltage :

4V

Radiation Hardening :

No

Width :

5.31mm

Element Configuration :

Single

Continuous Drain Current (ID) :

6.7A

Length :

15.87mm

Mount :

Through Hole

Drain to Source Breakdown Voltage :

900V

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Operating Temperature :

150°C

Vgs (Max) :

±20V

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

37 ns

Min Operating Temperature :

-55°C

Input Capacitance (Ciss) (Max) @ Vds :

2900pF @ 25V

FET Type :

N-Channel

Turn On Delay Time :

20 ns

Rds On (Max) @ Id, Vgs :

1.6Ohm @ 4A, 10V

Supplier Device Package :

TO-247-3

Nominal Vgs :

2 V

Rise Time :

34ns

Factory Lead Time :

8 Weeks

Mounting Type :

Through Hole

Recovery Time :

920 ns

Gate to Source Voltage (Vgs) :

20V

Drain to Source Resistance :

1.6Ohm

Package / Case :

TO-247-3

Turn-Off Delay Time :

130 ns

Power Dissipation-Max :

190W Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Rds On Max :

1.6 Ω

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

900V

Power Dissipation :

190W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance :

2.9nF

REACH SVHC :

Unknown

Gate Charge (Qg) (Max) @ Vgs :

200nC @ 10V

Number of Elements :

1

Current Rating :

6.7A

Number of Pins :

3

Voltage - Rated DC :

900V

Weight :

38.000013g

Current - Continuous Drain (Id) @ 25°C :

6.7A Tc

Number of Channels :

1

Height :

20.7mm