IRFP044N

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

1500pF @ 25V

Additional Feature :

AVALANCHE RATED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

180A

JESD-30 Code :

R-PSFM-T3

Number of Terminations :

3

Terminal Position :

Single

RoHS Status :

Non-RoHS Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

HEXFET®

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

JEDEC-95 Code :

TO-247AC

Gate Charge (Qg) (Max) @ Vgs :

61nC @ 10V

FET Type :

N-Channel

Vgs (Max) :

±20V

Number of Elements :

1

Transistor Application :

SWITCHING

Package / Case :

TO-247-3

ECCN Code :

EAR99

Surface Mount :

No

Rds On (Max) @ Id, Vgs :

20m Ω @ 29A, 10V

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

230 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

53A Tc

Qualification Status :

Not Qualified

DS Breakdown Voltage-Min :

55V

Power Dissipation-Max :

120W Tc

Mounting Type :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

1997

Drain-source On Resistance-Max :

0.02Ohm

Drain Current-Max (Abs) (ID) :

49A

Packaging :

Bulk

Drain to Source Voltage (Vdss) :

55V