IRFP044N

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Power Dissipation-Max :

120W Tc

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.02Ohm

Additional Feature :

AVALANCHE RATED

DS Breakdown Voltage-Min :

55V

Transistor Application :

SWITCHING

Published :

1997

JEDEC-95 Code :

TO-247AC

FET Type :

N-Channel

Transistor Element Material :

SILICON

Terminal Position :

Single

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

HEXFET®

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

49A

RoHS Status :

Non-RoHS Compliant

Number of Terminations :

3

Pulsed Drain Current-Max (IDM) :

180A

Rds On (Max) @ Id, Vgs :

20m Ω @ 29A, 10V

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

61nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

53A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Bulk

Surface Mount :

No

Input Capacitance (Ciss) (Max) @ Vds :

1500pF @ 25V

Vgs(th) (Max) @ Id :

4V @ 250µA

Package / Case :

TO-247-3

Case Connection :

DRAIN

JESD-30 Code :

R-PSFM-T3

Drain to Source Voltage (Vdss) :

55V

Avalanche Energy Rating (Eas) :

230 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE