IRFP044NPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

53A Tc

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Series :

HEXFET®

Width :

5.3086mm

Current Rating :

53A

Transistor Element Material :

SILICON

Factory Lead Time :

10 Weeks

Gate Charge (Qg) (Max) @ Vgs :

61nC @ 10V

Vgs (Max) :

±20V

Case Connection :

DRAIN

Nominal Vgs :

4 V

Package / Case :

TO-247-3

Published :

1997

Recovery Time :

110 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Channels :

1

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

30

Turn-Off Delay Time :

43 ns

Packaging :

Bulk

Height :

20.7mm

Drain Current-Max (Abs) (ID) :

49A

Voltage - Rated DC :

55V

Length :

15.87mm

FET Type :

N-Channel

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Continuous Drain Current (ID) :

53A

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Radiation Hardening :

No

Lead Pitch :

5.45mm

Power Dissipation :

100W

JEDEC-95 Code :

TO-247AC

Drain-source On Resistance-Max :

0.02Ohm

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

52 ns

Rds On (Max) @ Id, Vgs :

20m Ω @ 29A, 10V

Turn On Delay Time :

12 ns

Transistor Application :

SWITCHING

Mount :

Through Hole

Dual Supply Voltage :

55V

Input Capacitance (Ciss) (Max) @ Vds :

1500pF @ 25V

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Through Hole

Rise Time :

80ns

Drain to Source Breakdown Voltage :

55V

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

250

Number of Elements :

1

Threshold Voltage :

4V

Power Dissipation-Max :

120W Tc

Lead Free :

Lead Free