IRFP054NPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Number of Pins :

3

Lead Free :

Contains Lead, Lead Free

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Pulsed Drain Current-Max (IDM) :

290A

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

2900pF @ 25V

Continuous Drain Current (ID) :

81A

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

REACH SVHC :

No SVHC

Fall Time (Typ) :

46 ns

Turn On Delay Time :

11 ns

Packaging :

Bulk

Height :

20.7mm

Current - Continuous Drain (Id) @ 25°C :

81A Tc

Number of Terminations :

3

Resistance :

12mOhm

Current Rating :

72A

Mount :

Through Hole

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Number of Elements :

1

Recovery Time :

120 ns

Dual Supply Voltage :

55V

Element Configuration :

Single

FET Type :

N-Channel

Rise Time :

66ns

Turn-Off Delay Time :

40 ns

Operating Mode :

ENHANCEMENT MODE

Width :

5.3086mm

Package / Case :

TO-247-3

JEDEC-95 Code :

TO-247AC

Voltage - Rated DC :

55V

Factory Lead Time :

12 Weeks

Length :

15.87mm

Published :

1997

Power Dissipation :

130W

Threshold Voltage :

4V

Nominal Vgs :

4 V

Lead Pitch :

5.45mm

Power Dissipation-Max :

170W Tc

Series :

HEXFET®

Drain to Source Breakdown Voltage :

55V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Radiation Hardening :

No

Vgs (Max) :

±20V

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

12m Ω @ 43A, 10V