IRFP044NPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Recovery Time :

110 ns

Length :

15.87mm

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

1500pF @ 25V

Nominal Vgs :

4 V

Width :

5.3086mm

Number of Elements :

1

Number of Pins :

3

Drain Current-Max (Abs) (ID) :

49A

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Mount :

Through Hole

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Transistor Element Material :

SILICON

Case Connection :

DRAIN

REACH SVHC :

No SVHC

Voltage - Rated DC :

55V

Operating Temperature :

-55°C~175°C TJ

JESD-609 Code :

e3

FET Type :

N-Channel

Threshold Voltage :

4V

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

53A

Package / Case :

TO-247-3

Current Rating :

53A

Dual Supply Voltage :

55V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Height :

20.7mm

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain-source On Resistance-Max :

0.02Ohm

Series :

HEXFET®

Turn On Delay Time :

12 ns

Peak Reflow Temperature (Cel) :

250

Number of Terminations :

3

Rise Time :

80ns

Turn-Off Delay Time :

43 ns

Fall Time (Typ) :

52 ns

Packaging :

Bulk

JEDEC-95 Code :

TO-247AC

Lead Pitch :

5.45mm

Gate Charge (Qg) (Max) @ Vgs :

61nC @ 10V

Mounting Type :

Through Hole

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

20V

Time@Peak Reflow Temperature-Max (s) :

30

Vgs (Max) :

±20V

Published :

1997

Current - Continuous Drain (Id) @ 25°C :

53A Tc

Drain to Source Breakdown Voltage :

55V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

100W

Number of Channels :

1

Power Dissipation-Max :

120W Tc

Factory Lead Time :

10 Weeks

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

20m Ω @ 29A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99