IRFP044NPBF
- Mfr.Part #
- IRFP044NPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 53A TO247AC
- Stock
- 49,756
- In Stock :
- 49,756
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Through Hole
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY
- Turn-Off Delay Time :
- 43 ns
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~175°C TJ
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Rds On (Max) @ Id, Vgs :
- 20m Ω @ 29A, 10V
- Current Rating :
- 53A
- Drain Current-Max (Abs) (ID) :
- 49A
- Mounting Type :
- Through Hole
- Drain-source On Resistance-Max :
- 0.02Ohm
- Radiation Hardening :
- No
- Number of Channels :
- 1
- Lead Pitch :
- 5.45mm
- Number of Terminations :
- 3
- Threshold Voltage :
- 4V
- Width :
- 5.3086mm
- Number of Elements :
- 1
- Element Configuration :
- Single
- Drain to Source Breakdown Voltage :
- 55V
- Factory Lead Time :
- 10 Weeks
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 30
- REACH SVHC :
- No SVHC
- FET Type :
- N-Channel
- Length :
- 15.87mm
- JEDEC-95 Code :
- TO-247AC
- Package / Case :
- TO-247-3
- Nominal Vgs :
- 4 V
- Height :
- 20.7mm
- Turn On Delay Time :
- 12 ns
- Lead Free :
- Lead Free
- Current - Continuous Drain (Id) @ 25°C :
- 53A Tc
- Continuous Drain Current (ID) :
- 53A
- Power Dissipation-Max :
- 120W Tc
- Dual Supply Voltage :
- 55V
- Case Connection :
- DRAIN
- Published :
- 1997
- Power Dissipation :
- 100W
- Gate Charge (Qg) (Max) @ Vgs :
- 61nC @ 10V
- Rise Time :
- 80ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Fall Time (Typ) :
- 52 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs (Max) :
- ±20V
- Recovery Time :
- 110 ns
- Voltage - Rated DC :
- 55V
- Operating Mode :
- ENHANCEMENT MODE
- JESD-609 Code :
- e3
- Packaging :
- Bulk
- Peak Reflow Temperature (Cel) :
- 250
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 1500pF @ 25V
- Series :
- HEXFET®
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Datasheets
- IRFP044NPBF

N-Channel Bulk 20m Ω @ 29A, 10V ±20V 1500pF @ 25V 61nC @ 10V TO-247-3
IRFP044NPBF belongs to the family of HEXFET? power MOSFET that is designed based on the advanced processing techniques realize extremely low on-resistance per silicon area. Moreover, the IRFP044NPBF is well known for its fast switching speed and ruggedized device design. All of these make it be more efficient and reliable and be used in a wide range of applications.
IRFP044NPBF Features
Fast switching
Advanced processing techniques
Low on-resistance per silicon area
Available in the TO-247 package for commercial-industrial applications
IRFP044NPBF Applications
Power supplies
DC-DC converters
Motor controllers
Consumer electronics
Automotive electronics
Transportation technology
Radio frequency (RF) applications
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