IRFPF40
- Mfr.Part #
- IRFPF40
- Manufacturer
- Vishay
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 4.7A TO247-3
- Stock
- 30,056
- In Stock :
- 30,056
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 150W Tc
- RoHS Status :
- Non-RoHS Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 1600pF @ 25V
- Mounting Type :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 120nC @ 10V
- Lead Free :
- Contains Lead
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On Max :
- 2.5 Ω
- Supplier Device Package :
- TO-247-3
- Continuous Drain Current (ID) :
- 4.7A
- Mount :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 4.7A Tc
- Input Capacitance :
- 1.6nF
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Turn On Delay Time :
- 15 ns
- Current Rating :
- 4.7A
- Turn-Off Delay Time :
- 110 ns
- Weight :
- 38.000013g
- Gate to Source Voltage (Vgs) :
- 20V
- Min Operating Temperature :
- -55°C
- Drain to Source Breakdown Voltage :
- 900V
- Height :
- 20.7mm
- Rise Time :
- 36ns
- Length :
- 15.87mm
- Max Operating Temperature :
- 150°C
- Operating Temperature :
- -55°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 2.5Ohm @ 2.8A, 10V
- Vgs (Max) :
- ±20V
- Fall Time (Typ) :
- 32 ns
- Drain to Source Resistance :
- 2.5Ohm
- Width :
- 5.31mm
- Number of Channels :
- 1
- FET Type :
- N-Channel
- Element Configuration :
- Single
- Drain to Source Voltage (Vdss) :
- 900V
- Published :
- 2017
- Voltage - Rated DC :
- 900V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package / Case :
- TO-247-3
- Packaging :
- Tube
- Number of Pins :
- 3
- Datasheets
- IRFPF40

N-Channel Tube 2.5Ohm @ 2.8A, 10V ±20V 1600pF @ 25V 120nC @ 10V 900V TO-247-3
IRFPF40 Overview
The maximum input capacitance of this device is 1600pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 4.7A.When VGS=900V, and ID flows to VDS at 900VVDS, the drain-source breakdown voltage is 900V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 110 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 2.5Ohm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 15 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 900V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IRFPF40 Features
a continuous drain current (ID) of 4.7A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 110 ns
single MOSFETs transistor is 2.5Ohm
a 900V drain to source voltage (Vdss)
IRFPF40 Applications
There are a lot of Vishay Siliconix
IRFPF40 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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