IRFP4468PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

Not Qualified

Fall Time (Typ) :

260 ns

Power Dissipation-Max :

520W Tc

Package / Case :

TO-247-3

Drain to Source Breakdown Voltage :

100V

Dual Supply Voltage :

100V

Rds On (Max) @ Id, Vgs :

2.6m Ω @ 180A, 10V

Termination :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tube

Turn On Delay Time :

52 ns

Factory Lead Time :

12 Weeks

Turn-Off Delay Time :

160 ns

JEDEC-95 Code :

TO-247AC

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

30

Vgs (Max) :

±20V

Threshold Voltage :

4V

Resistance :

2.6MOhm

Number of Terminations :

3

Mount :

Through Hole

Number of Channels :

1

Transistor Application :

SWITCHING

Contact Plating :

Tin

Nominal Vgs :

4 V

Number of Elements :

1

Published :

2004

Height :

24.99mm

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

520W

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

540nC @ 10V

FET Type :

N-Channel

Series :

HEXFET®

Max Junction Temperature (Tj) :

175°C

Element Configuration :

Single

Number of Pins :

3

Avalanche Energy Rating (Eas) :

740 mJ

Width :

5.3086mm

Transistor Element Material :

SILICON

Rise Time :

230ns

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Peak Reflow Temperature (Cel) :

250

Length :

15.87mm

Continuous Drain Current (ID) :

290A

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

19860pF @ 50V

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

4V @ 250µA

ECCN Code :

EAR99